BD246 Transistor Datasheet & Specifications

PNP TO-3PN High Power SPTECH
VCEO
45V
Ic Max
10A
Pd Max
80W
hFE Gain
40

Quick Reference

The BD246 is a PNP bipolar transistor in a TO-3PN package by SPTECH. This datasheet provides complete specifications including 45V breakdown voltage and 10A continuous collector current. Download the BD246 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3PNPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic10ACollector current
Pd80WPower dissipation
DC Current Gain40hFE / Beta
Frequency3MHzTransition speed (fT)
VCEsat4VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current700uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
NJW1302G PNP TO-3PN 250V 15A 200W
2SA2151 PNP TO-3PN 200V 15A 160W
2SA1386 PNP TO-3PN 160V 15A 130W
TIP2955 PNP TO-3PN 60V 15A 90W
2SB817 PNP TO-3PN 140V 12A 100W
2SA1106 PNP TO-3PN 140V 10A 100W
2SA1141 PNP TO-3PN 115V 10A 100W
2SA1186 PNP TO-3PN 150V 10A 100W
2SA1232 PNP TO-3PN 130V 10A 100W
MP1526 PNP TO-3PN 260V 15A 150W