2SB817 Transistor Datasheet & Specifications
PNP
TO-3PN
High Power
SPTECH
VCEO
140V
Ic Max
12A
Pd Max
100W
hFE Gain
200
Quick Reference
The 2SB817 is a PNP bipolar transistor in a TO-3PN package by SPTECH. This datasheet provides complete specifications including 140V breakdown voltage and 12A continuous collector current. Download the 2SB817 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PN | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 12A | Collector current |
| Pd | 100W | Power dissipation |
| DC Current Gain | 200 | hFE / Beta |
| Frequency | 15MHz | Transition speed (fT) |
| VCEsat | 2.5V | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |