NJW0302G-JSM Transistor Datasheet & Specifications
PNP
TO-3PN
High Power
JSMSEMI
VCEO
250V
Ic Max
15A
Pd Max
150W
hFE Gain
160
Quick Reference
The NJW0302G-JSM is a PNP bipolar transistor in a TO-3PN package by JSMSEMI. This datasheet provides complete specifications including 250V breakdown voltage and 15A continuous collector current. Download the NJW0302G-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-3PN | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 250V | Breakdown voltage |
| Ic | 15A | Collector current |
| Pd | 150W | Power dissipation |
| DC Current Gain | 160 | hFE / Beta |
| Frequency | 30MHz | Transition speed (fT) |
| VCEsat | 600mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Cutoff Current | 50mA | Leakage (ICBO) |
| Temp | - | Operating temp |