2SA1186 Transistor Datasheet & Specifications
PNP
TO-3PN
High Power
SPTECH
VCEO
150V
Ic Max
10A
Pd Max
100W
hFE Gain
180
Quick Reference
The 2SA1186 is a PNP bipolar transistor in a TO-3PN package by SPTECH. This datasheet provides complete specifications including 150V breakdown voltage and 10A continuous collector current. Download the 2SA1186 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | SPTECH | Original Manufacturer |
| Package | TO-3PN | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 150V | Breakdown voltage |
| Ic | 10A | Collector current |
| Pd | 100W | Power dissipation |
| DC Current Gain | 180 | hFE / Beta |
| Frequency | 60MHz | Transition speed (fT) |
| VCEsat | 2V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 100uA | Leakage (ICBO) |
| Temp | - | Operating temp |