BCX5510TA Transistor Datasheet & Specifications

NPN SOT-89 General Purpose DIODES
VCEO
60V
Ic Max
1A
Pd Max
1.5W
hFE Gain
25

Quick Reference

The BCX5510TA is a NPN bipolar transistor in a SOT-89 package by DIODES. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the BCX5510TA datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd1.5WPower dissipation
DC Current Gain25hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
BCX56-16 NPN SOT-89 80V 1A 1.3W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
BCX56,115 NPN SOT-89 80V 1A 1.35W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX56-10,115 NPN SOT-89 80V 1A 500mW
BCX55-16,115 NPN SOT-89 60V 1A 1.35W
BCX56-16,115-CN NPN SOT-89 80V 1A 500mW