BCX55-16-JSM Transistor Datasheet & Specifications

NPN SOT-89 General Purpose JSMSEMI
VCEO
60V
Ic Max
1A
Pd Max
500mW
hFE Gain
250

Quick Reference

The BCX55-16-JSM is a NPN bipolar transistor in a SOT-89 package by JSMSEMI. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the BCX55-16-JSM datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSMSEMIOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd500mWPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
BCX56-16 NPN SOT-89 80V 1A 1.3W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W
BCX56,115 NPN SOT-89 80V 1A 1.35W
ZXTN2011ZTA NPN SOT-89 100V 4.5A 2.1W
BCX56-10,115 NPN SOT-89 80V 1A 500mW
BCX55-16,115 NPN SOT-89 60V 1A 1.35W
BCX56-16,115-CN NPN SOT-89 80V 1A 500mW