BCW66GLT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
45V
Ic Max
800mA
Pd Max
225mW
hFE Gain
50

Quick Reference

The BCW66GLT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 45V breakdown voltage and 800mA continuous collector current. Download the BCW66GLT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO45VBreakdown voltage
Ic800mACollector current
Pd225mWPower dissipation
DC Current Gain50hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT493ATA NPN SOT-23 60V 1A 500mW
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
FMMT491TA NPN SOT-23 60V 1A 500mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN25050DFHTA NPN SOT-23 50V 4A 1.25W