BCV27 Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
1.2A
Pd Max
350mW
hFE Gain
20000

Quick Reference

The BCV27 is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 1.2A continuous collector current. Download the BCV27 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic1.2ACollector current
Pd350mWPower dissipation
DC Current Gain20000hFE / Beta
Frequency220MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒ@(Tj)Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
PBSS4350T,215 NPN SOT-23 50V 2A 300mW
NSS40201LT1G NPN SOT-23 40V 2A 460mW
PBSS4230T,215 NPN SOT-23 30V 2A 480mW
ZXTN25100DFHTA NPN SOT-23 100V 2.5A 1.25W
NSS1C201LT1G NPN SOT-23 100V 2A 710mW
FMMT619TA NPN SOT-23 50V 2A 625mW
DSS4240T-7 NPN SOT-23 40V 2A 730mW
ZXTN2018FTA NPN SOT-23 60V 5A 1.56W
ZXTN25050DFHTA NPN SOT-23 50V 4A 1.25W