BCP55 Transistor Datasheet & Specifications

NPN SOT-223 General Purpose HXY MOSFET
VCEO
60V
Ic Max
1A
Pd Max
1.5W
hFE Gain
250

Quick Reference

The BCP55 is a NPN bipolar transistor in a SOT-223 package by HXY MOSFET. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the BCP55 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-223Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic1ACollector current
Pd1.5WPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FZT857TA NPN SOT-223 300V 3.5A 3W
ZX5T851GTA NPN SOT-223 60V 6A 1.6W
BCP56-16,115 NPN SOT-223 80V 1A 1.35W
STN851 NPN SOT-223 60V 5A 1.6W
FZT855TA NPN SOT-223 150V 5A 3W
FZT493TA NPN SOT-223 100V 1A 3W
BCP55TA NPN SOT-223 60V 1A 2W
BCP5616QTA NPN SOT-223 80V 1A 2W
BCP5616TA NPN SOT-223 80V 1A 2W
FZT653TA NPN SOT-223 100V 2A 3W