BC856BQ-7-F Transistor Datasheet & Specifications

PNP SOT-23 General Purpose DIODES
VCEO
65V
Ic Max
100mA
Pd Max
350mW
hFE Gain
475

Quick Reference

The BC856BQ-7-F is a PNP bipolar transistor in a SOT-23 package by DIODES. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856BQ-7-F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd350mWPower dissipation
DC Current Gain475hFE / Beta
Frequency200MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
2SA1721-O(TE85L,F) PNP SOT-23 300V 100mA 150mW