BC856ALT1G Transistor Datasheet & Specifications

PNP SOT-23 General Purpose onsemi
VCEO
65V
Ic Max
100mA
Pd Max
225mW
hFE Gain
90

Quick Reference

The BC856ALT1G is a PNP bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856ALT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd225mWPower dissipation
DC Current Gain90hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current4uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FMMT560TA PNP SOT-23 500V 150mA 500mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
2SA1721-O(TE85L,F) PNP SOT-23 300V 100mA 150mW
PBHV9050T,215 PNP SOT-23 500V 150mA 300mW