BC856B Transistor Datasheet & Specifications

PNP SOT-23 General Purpose Guangdong Hottech
VCEO
65V
Ic Max
100mA
Pd Max
200mW
hFE Gain
220

Quick Reference

The BC856B is a PNP bipolar transistor in a SOT-23 package by Guangdong Hottech. This datasheet provides complete specifications including 65V breakdown voltage and 100mA continuous collector current. Download the BC856B datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerGuangdong HottechOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO65VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain220hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
FMMT560TA PNP SOT-23 500V 150mA 500mW
BC856ALT1G PNP SOT-23 65V 100mA 225mW
MMBTA92 PNP SOT-23 300V 500mA 300mW
ZXTP25100BFHTA PNP SOT-23 100V 2A 1.25W
LBC856BLT1G PNP SOT-23 65V 100mA 225mW
FMMTA92TA PNP SOT-23 300V 200mA 310mW
MMBT5401 PNP SOT-23 150V 500mA 225mW
MMBT5401 PNP SOT-23 150V 600mA 300mW
MMBTA92 PNP SOT-23 300V 200mA 300mW
2SA1721-O(TE85L,F) PNP SOT-23 300V 100mA 150mW