BC849CLT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
30V
Ic Max
100mA
Pd Max
225mW
hFE Gain
110

Quick Reference

The BC849CLT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 30V breakdown voltage and 100mA continuous collector current. Download the BC849CLT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic100mACollector current
Pd225mWPower dissipation
DC Current Gain110hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat250mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current5uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
MMBT3904-7-F NPN SOT-23 40V 200mA 310mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
FMMT458TA NPN SOT-23 400V 225mA 500mW
MMBTA42 NPN SOT-23 200V 500mA 350mW