BC818-40LT1G Transistor Datasheet & Specifications

NPN SOT-23 General Purpose onsemi
VCEO
25V
Ic Max
500mA
Pd Max
225mW
hFE Gain
250

Quick Reference

The BC818-40LT1G is a NPN bipolar transistor in a SOT-23 package by onsemi. This datasheet provides complete specifications including 25V breakdown voltage and 500mA continuous collector current. Download the BC818-40LT1G datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO25VBreakdown voltage
Ic500mACollector current
Pd225mWPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat700mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 300mW
ZXTN2020FTA NPN SOT-23 100V 4A 1.2W
FMMT491ATA NPN SOT-23 40V 1A 500mW
BC817-16LT1G NPN SOT-23 45V 500mA 225mW
BC817-40LT1G NPN SOT-23 45V 500mA 225mW
DN350T05-7 NPN SOT-23 350V 500mA 300mW
DNBT8105-7 NPN SOT-23 60V 1A 600mW
SS8050 NPN SOT-23 25V 1.5A 300mW
MMBTA42 NPN SOT-23 200V 500mA 350mW
ZXTN2040FTA NPN SOT-23 40V 1A 310mW