30P06 MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level HL
Vds Max
60V
Id Max
30A
Rds(on)
24mΩ@10V;30.4mΩ@4.5V
Vgs(th)
1.8V

Quick Reference

The 30P06 is an P-Channel MOSFET in a TO-252 package, manufactured by HL. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerHLOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)30AMax current handling
Power Dissipation (Pd)79WMax thermal limit
On-Resistance (Rds(on))24mΩ@10V;30.4mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.8VVoltage required to turn on
Gate Charge (Qg)68nC@10VSwitching energy
Input Capacitance (Ciss)4.026nFInternal gate capacitance
Output Capacitance (Coss)134pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
HSU6119 P-Channel TO-252 60V 80A 6mΩ@10V 2V
HUASHUO 📄 PDF
SUD50P06-15(UMW) P-Channel TO-252 60V 50A 12mΩ@10V 1.8V
SUD50P06-15L-DO P-Channel TO-252 60V 50A 17mΩ@10V 1.6V
DOINGTER 📄 PDF
NVD5117PLT4G(TOKMAS) P-Channel TO-252 60V 60A 19mΩ@10V 2.2V
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VBE2625 P-Channel TO-252 60V 50A 20mΩ@10V
25mΩ@4.5V
1.5V
VBsemi Elec 📄 PDF
JSM60P50K P-Channel TO-252 60V 50A 20mΩ@10V 2.2V
JSMSEMI 📄 PDF
OSD80P06T P-Channel TO-252 60V 80A 20mΩ@10V 2.1V
DOD50P06 P-Channel TO-252 60V 50A 25mΩ@4.5V 2.2V
DOINGTER 📄 PDF
SQD50P08-25L_GE3 P-Channel TO-252 80V 50A 25mΩ@10V 1.5V
VISHAY 📄 PDF
SQD40P10-40L_GE3-DO P-Channel TO-252 100V 40A 40mΩ@10V 1.8V
DOINGTER 📄 PDF