DOD50P06 MOSFET Datasheet & Specifications

P-Channel TO-252 Logic-Level DOINGTER
Vds Max
60V
Id Max
50A
Rds(on)
25mΩ@4.5V
Vgs(th)
2.2V

Quick Reference

The DOD50P06 is an P-Channel MOSFET in a TO-252 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDOINGTEROriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)270WMax thermal limit
On-Resistance (Rds(on))25mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.2VVoltage required to turn on
Gate Charge (Qg)114nC@10VSwitching energy
Input Capacitance (Ciss)4.399nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

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VBE2625 P-Channel TO-252 60V 50A 20mΩ@10V
25mΩ@4.5V
1.5V
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PJMG60P60TE P-Channel TO-252 60V 60A 20mΩ@4.5V 2.5V
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