30N06 MOSFET Datasheet & Specifications (HL, TO-252)
N-Channel
TO-252
Logic-Level
HL
Vds Max
60V
Id Max
30A
Rds(on)
23mΩ@10V
Vgs(th)
1.7V
Quick Reference
The 30N06 is an N-Channel MOSFET in a TO-252 package, manufactured by HL. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HL | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 41.7W | Max thermal limit |
| On-Resistance (Rds(on)) | 23mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.7V | Voltage required to turn on |
| Gate Charge (Qg) | 22nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.355nF | Internal gate capacitance |
| Output Capacitance (Coss) | 60pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| HB06N047SG | N-Channel | TO-252 | 60V | 110A | 3.7mΩ@10V | 1.7V | R+O 📄 PDF |
| AOD2606-MS | N-Channel | TO-252 | 60V | 80A | 6mΩ@10V | 1.4V | MSKSEMI 📄 PDF |
| FQD50N06-VB | N-Channel | TO-252 | 60V | 56A | 10mΩ@10V 13mΩ@4.5V |
2V | VBsemi Elec 📄 PDF |
| STD30NF06LT4 | N-Channel | TO-252 | 60V | 50A | 14mΩ@10V | 1.9V | TECH PUBLIC 📄 PDF |
| 50N06 | N-Channel | TO-252 | 60V | 50A | 21mΩ@10V | 2.2V | KUU 📄 PDF |
| TX40N06B | N-Channel | TO-252 | 60V | 35A | 25mΩ@10V | 2V | XDS 📄 PDF |
| AOD4130-VB | N-Channel | TO-252 | 60V | 45A | 25mΩ@10V | 2V | VBsemi Elec 📄 PDF |
| SP010N04BGTH | N-Channel | TO-252 | 100V | 120A | 5mΩ@10V 6.5mΩ@4.5V |
1.7V | Siliup 📄 PDF |
| MDDG10R08D | N-Channel | TO-252 | 100V | 75A | 6.5mΩ@10V | 2V | MDD(Microdiod... 📄 PDF |
| HB10N085SG | N-Channel | TO-252 | 100V | 80A | 6.7mΩ@10V | 1.7V | R+O 📄 PDF |
| PGD10N100 | N-Channel | TO-252 | 100V | 65A | 7.8mΩ@10V | 2V | HT(Shenzhen J... 📄 PDF |
| HB10N200S | N-Channel | TO-252 | 100V | 45A | 14mΩ@10V | 1.6V | R+O 📄 PDF |
| 50N10 | N-Channel | TO-252 | 100V | 50A | 14mΩ@10V | 2.2V | GOODWORK 📄 PDF |
| SDM017G10DB | N-Channel | TO-252 | 100V | 40A | 17mΩ@10V | 1.9V | SINEDEVICE 📄 PDF |
| PJD50N10AL-AU_L2_000A1 | N-Channel | TO-252 | 100V | 42A | 20mΩ@10V 22mΩ@4.5V |
1.8V | PANJIT 📄 PDF |