2SD602A Datasheet & Equivalents

NPN SOT-23 General Purpose JSCJ
VCEO
50V
Ic Max
500mA
Pd Max
200mW
hFE Gain
85

Quick Reference

The 2SD602A is a NPN bipolar junction transistor in a SOT-23 package, manufactured by JSCJ. It supports a breakdown voltage of 50V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)200mWMax thermal limit
DC Current Gain (hFE)85Base signal amplification ratio
Transition Frequency (fT)200MHzMax operating frequency
Saturation Voltage (VCEsat)600mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)5VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC3325-Y(TE85L NPN SOT-23 50V 500mA 25 200mW
F) NPN SOT-23 50V 500mA 25 200mW
2SC3325-Y NPN SOT-23 50V 500mA 180 200mW
LF NPN SOT-23 50V 1.25A 200 500mW
2SD1484KT146R NPN SOT-23 60V 500mA 100 300mW
FMMTL619TA NPN SOT-23 60V 500mA 100 310mW
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 100 300mW
MMBTA05-7-F NPN SOT-23 60V 500mA 100 300mW
MMBTA05-TP NPN SOT-23 60V 500mA 100 350mW
MMBTA05LT1G NPN SOT-23 60V 500mA 100 225mW
MMBTA05Q-13-F NPN SOT-23 60V 500mA 100 300mW
NSVMMBTA05LT1G NPN SOT-23 60V 500mA 100 300mW
MMBTA05 NPN SOT-23 60V 500mA 110 350mW
MMBTA05 NPN SOT-23 60V 500mA 400 300mW
BCV71 NPN SOT-23 60V 500mA 400 300mW
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MMBTA05-JSM NPN SOT-23 60V 500mA 400 300mW
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MMBTA05 NPN SOT-23 60V 500mA 400 300mW
MMBTA05 NPN SOT-23 60V 500mA 1000 300mW
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MMBTA05 NPN SOT-23 60V 500mA 10000 300mW
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BCV47 NPN SOT-23 60V 500mA 10000 300mW