NSVMMBTA05LT1G Datasheet & Equivalents

NPN SOT-23 General Purpose onsemi
VCEO
60V
Ic Max
500mA
Pd Max
225mW
hFE Gain
100

Quick Reference

The NSVMMBTA05LT1G is a NPN bipolar junction transistor in a SOT-23 package, manufactured by onsemi. It supports a breakdown voltage of 60V and continuous collector current of 500mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)60VMax breakdown voltage
Collector Current (Ic)500mAMax current handling
Power Dissipation (Pd)225mWMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MMBTA05(RANGE:100-400) NPN SOT-23 60V 500mA 100 300mW
MMBTA05-7-F NPN SOT-23 60V 500mA 100 310mW
MMBTA05-TP NPN SOT-23 60V 500mA 100 300mW
MMBTA05LT1G NPN SOT-23 60V 500mA 100 300mW
MMBTA05Q-13-F NPN SOT-23 60V 500mA 100 350mW
MMBTA05 NPN SOT-23 60V 500mA 100 300mW
MMBTA05 NPN SOT-23 60V 500mA 100 300mW
BCV71 NPN SOT-23 60V 500mA 110 350mW
MMBTA05-JSM NPN SOT-23 60V 500mA 400 300mW
MMBTA05 NPN SOT-23 60V 500mA 400 300mW
FUXINSEMI ๐Ÿ“„ PDF
MMBTA05 NPN SOT-23 60V 500mA 400 300mW
HXY MOSFET ๐Ÿ“„ PDF
MMBTA05 NPN SOT-23 60V 500mA 400 300mW
BCV47 NPN SOT-23 60V 500mA 1000 300mW
GOODWORK ๐Ÿ“„ PDF
BCV47 NPN SOT-23 60V 500mA 10000 300mW
FUXINSEMI ๐Ÿ“„ PDF
BCV47 NPN SOT-23 60V 500mA 10000 300mW
BCV47 NPN SOT-23 60V 500mA 10000 300mW
MMBT5551 NPN SOT-23 60V 600mA 300 300mW
FMMT491-TP NPN SOT-23 60V 1A 100 500mW
ZXTN2038FTA NPN SOT-23 60V 1A 100 350mW
FMMT491 NPN SOT-23 60V 1A 100 250mW