2SD1816L-R-TN3-R Datasheet & Equivalents

NPN TO-252 (DPAK) General Purpose UTC
VCEO
100V
Ic Max
4A
Pd Max
1W
hFE Gain
100

Quick Reference

The 2SD1816L-R-TN3-R is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by UTC. It supports a breakdown voltage of 100V and continuous collector current of 4A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)4AMax current handling
Power Dissipation (Pd)1WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)180MHzMax operating frequency
Saturation Voltage (VCEsat)150mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SD1816L-S-TN3-R NPN TO-252 (DPAK) 100V 4A 140 1W
2SD1816S-TL-E NPN TO-252 (DPAK) 100V 4A 140 20W
2SD1816G-S-TN3-R NPN TO-252 (DPAK) 100V 4A 560 25W
MJD122 NPN TO-252 (DPAK) 100V 5A 1000 65W
MJD41CJ NPN TO-252 (DPAK) 100V 6A 30 15W
Nexperia ๐Ÿ“„ PDF
MJD41CQ-13 NPN TO-252 (DPAK) 100V 6A - 2.7W
MJD122(MS) NPN TO-252 (DPAK) 100V 6A 12000 1.25W
MJD122 NPN TO-252 (DPAK) 100V 8A - 1.75W
GOODWORK ๐Ÿ“„ PDF
MJD122-TP NPN TO-252 (DPAK) 100V 8A 1000 1.5W
MJD122T4 NPN TO-252 (DPAK) 100V 8A 1000 20W
MJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
MJD122 NPN TO-252 (DPAK) 100V 8A 12000 1.5W
MJD41C(MS) NPN TO-252 (DPAK) 100V 9A 75 1.25W
MJD41C NPN TO-252 (DPAK) 100V 9A 30 1.25W
BU406D NPN TO-252 (DPAK) 150V 7A 80 65W
BTC1510F3L-TN3-R NPN TO-252 (DPAK) 150V 10A 20 1.1W