MJD122 Datasheet & Equivalents

NPN TO-252 (DPAK) High Power Minos
VCEO
100V
Ic Max
5A
Pd Max
65W
hFE Gain
1000

Quick Reference

The MJD122 is a NPN bipolar junction transistor in a TO-252 (DPAK) package, manufactured by Minos. It supports a breakdown voltage of 100V and continuous collector current of 5A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerMinosOriginal Manufacturer
PackageTO-252 (DPAK)Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)100VMax breakdown voltage
Collector Current (Ic)5AMax current handling
Power Dissipation (Pd)65WMax thermal limit
DC Current Gain (hFE)1000Base signal amplification ratio
Transition Frequency (fT)-Max operating frequency
Saturation Voltage (VCEsat)2VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current200uALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
MJD41CJ NPN TO-252 (DPAK) 100V 6A 30 15W
Nexperia ๐Ÿ“„ PDF
MJD41CQ-13 NPN TO-252 (DPAK) 100V 6A - 2.7W
MJD122(MS) NPN TO-252 (DPAK) 100V 6A 12000 1.25W
MJD122-TP NPN TO-252 (DPAK) 100V 8A 1000 1.5W
MJD122T4 NPN TO-252 (DPAK) 100V 8A 1000 20W
MJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
NJVMJD122T4G NPN TO-252 (DPAK) 100V 8A 1000 1.75W
MJD41C(MS) NPN TO-252 (DPAK) 100V 9A 75 1.25W
MJD41C NPN TO-252 (DPAK) 100V 9A 30 1.25W
BU406D NPN TO-252 (DPAK) 150V 7A 80 65W
BTC1510F3L-TN3-R NPN TO-252 (DPAK) 150V 10A 20 1.1W