2SC5566-TD-E Datasheet & Equivalents

NPN SOT-89 High Power onsemi
VCEO
50V
Ic Max
4A
Pd Max
3.5W
hFE Gain
200

Quick Reference

The 2SC5566-TD-E is a NPN bipolar junction transistor in a SOT-89 package, manufactured by onsemi. It supports a breakdown voltage of 50V and continuous collector current of 4A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)4AMax current handling
Power Dissipation (Pd)3.5WMax thermal limit
DC Current Gain (hFE)200Base signal amplification ratio
Transition Frequency (fT)400MHzMax operating frequency
Saturation Voltage (VCEsat)105mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current1uALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SC5569-TD-E NPN SOT-89 50V 7A 200 3.5W
2SC5569G-AB3-R NPN SOT-89 50V 7A 560 3.5W
ZXTN19055DZTA NPN SOT-89 55V 6A 250 2.1W
ZXTN2010ZTA-CN NPN SOT-89 60V 4.5A 300 1W
ChipNobo ๐Ÿ“„ PDF
ZXTN2010ZTA NPN SOT-89 60V 5A 55 2.1W
PBSS304 NPN SOT-89 60V 5A 40 2.1W
PBSS304NX NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPBT60N5T3 NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPLBTN560Y3T1G NPN SOT-89 60V 5.2A - 500mW
TECH PUBLIC ๐Ÿ“„ PDF
2SC5566-TP NPN SOT-89 60V 5.2A 520 500mW
TECH PUBLIC ๐Ÿ“„ PDF
TPZXTN19055DZTA NPN SOT-89 60V 5.2A 520 500mW
TECH PUBLIC ๐Ÿ“„ PDF
ZXTN2011ZTA NPN SOT-89 100V 4.5A 100 2.1W