2SB1115 Datasheet & Equivalents

PNP SOT-89 General Purpose Shikues
VCEO
50V
Ic Max
1A
Pd Max
2W
hFE Gain
100

Quick Reference

The 2SB1115 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by Shikues. It supports a breakdown voltage of 50V and continuous collector current of 1A. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerShikuesOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)50VMax breakdown voltage
Collector Current (Ic)1AMax current handling
Power Dissipation (Pd)2WMax thermal limit
DC Current Gain (hFE)100Base signal amplification ratio
Transition Frequency (fT)80MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-Safe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SAR513P5T100 PNP SOT-89 50V 1A 180 2W
2SB766AR PNP SOT-89 50V 1A 240 1W
2SA1797(RANGE:180-390) PNP SOT-89 50V 2A 82 500mW
2DA1213Y-13 PNP SOT-89 50V 2A 120 1W
2SA1020G-Y-AB3-R PNP SOT-89 50V 2A 120 500mW
2SA1213-Y(TE12L PNP SOT-89 50V 2A 70 1W
ZC PNP SOT-89 50V 2A 70 500mW
2SA1213Y-2AF PNP SOT-89 50V 2A 70 500mW
2SA1213 PNP SOT-89 50V 2A 180 550mW
LBSS5250Y3T1G PNP SOT-89 50V 2A 200 500mW
2SA1797G-B-AB3-R PNP SOT-89 50V 2A 200 1W
2SA2060(TE12L PNP SOT-89 50V 2A 200 500mW
F PNP SOT-89 50V 2A 240 500mW
HXY MOSFET ๐Ÿ“„ PDF
2SB1123T-TD-E PNP SOT-89 50V 2A 240 500mW
GOODWORK ๐Ÿ“„ PDF
PBSS5250X-HXY PNP SOT-89 50V 2A 390 500mW
2SA1213 PNP SOT-89 60V 1A 100 500mW
2SA1797-Q PNP SOT-89 60V 1A 80 1.5W
AD-KTA1668-Y PNP SOT-89 60V 1A 63 1.35W
Nexperia ๐Ÿ“„ PDF
FCX591TA PNP SOT-89 60V 1A 25 1.5W
BCX52-10 PNP SOT-89 60V 1A 250 500mW