2SA1201 Datasheet & Equivalents

PNP SOT-89 General Purpose HT(Shenzhen Jinyu Semicon)
VCEO
120V
Ic Max
800mA
Pd Max
500mW
hFE Gain
-

Quick Reference

The 2SA1201 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a breakdown voltage of 120V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHT(Shenzhen Jinyu Semicon)Original Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)800mAMax current handling
Power Dissipation (Pd)500mWMax thermal limit
DC Current Gain (hFE)-Base signal amplification ratio
Transition Frequency (fT)120MHzMax operating frequency
Saturation Voltage (VCEsat)240@100mA,5VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1201Y PNP SOT-89 120V 800mA 80 500mW
2DA1201Y-7 PNP SOT-89 120V 800mA 120 1.5W
2SA1201-JSM PNP SOT-89 120V 800mA 240 500mW
2SA1661 PNP SOT-89 120V 800mA 240 500mW
2SA1661-JSM PNP SOT-89 120V 800mA 240 500mW
2SA1661-Y PNP SOT-89 120V 800mA 240 1W
2SA1013(RANGE:160-320) PNP SOT-89 160V 1A 160 500mW
2SA1013-JSM PNP SOT-89 160V 1A 320 500mW
2SA1013Y PNP SOT-89 160V 1A 320 500mW
2SA1013Y-2AF PNP SOT-89 160V 1A 320 500mW
A1013Y-2AF PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF