2DA1201Y-7 Datasheet & Equivalents

PNP SOT-89 General Purpose DIODES
VCEO
120V
Ic Max
800mA
Pd Max
1.5W
hFE Gain
120

Quick Reference

The 2DA1201Y-7 is a PNP bipolar junction transistor in a SOT-89 package, manufactured by DIODES. It supports a breakdown voltage of 120V and continuous collector current of 800mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)120VMax breakdown voltage
Collector Current (Ic)800mAMax current handling
Power Dissipation (Pd)1.5WMax thermal limit
DC Current Gain (hFE)120Base signal amplification ratio
Transition Frequency (fT)160MHzMax operating frequency
Saturation Voltage (VCEsat)1VVoltage drop when fully ON
Emitter-Base Voltage (Vebo)7VMax emitter-base breakdown
Collector Cutoff Current100nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2SA1201Y PNP SOT-89 120V 800mA 80 500mW
2SA1201-JSM PNP SOT-89 120V 800mA 240 500mW
2SA1661 PNP SOT-89 120V 800mA 240 500mW
2SA1661-JSM PNP SOT-89 120V 800mA 240 500mW
2SA1661-Y PNP SOT-89 120V 800mA 240 1W
2SA1201 PNP SOT-89 120V 800mA 240 500mW
2SA1201 PNP SOT-89 120V 800mA - 500mW
HT(Shenzhen J... ๐Ÿ“„ PDF
2SA1013(RANGE:160-320) PNP SOT-89 160V 1A 160 500mW
2SA1013-JSM PNP SOT-89 160V 1A 320 500mW
2SA1013Y PNP SOT-89 160V 1A 320 500mW
2SA1013Y-2AF PNP SOT-89 160V 1A 320 500mW
A1013Y-2AF PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
YONGYUTAI ๐Ÿ“„ PDF
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013 PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
2SA1013-Y PNP SOT-89 160V 1A 320 500mW
FUXINSEMI ๐Ÿ“„ PDF