2N5551TFR Datasheet & Equivalents

NPN TO-92 General Purpose onsemi
VCEO
160V
Ic Max
600mA
Pd Max
625mW
hFE Gain
80

Quick Reference

The 2N5551TFR is a NPN bipolar junction transistor in a TO-92 package, manufactured by onsemi. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufactureronsemiOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)625mWMax thermal limit
DC Current Gain (hFE)80Base signal amplification ratio
Transition Frequency (fT)100MHzMax operating frequency
Saturation Voltage (VCEsat)200mVVoltage drop when fully ON
Emitter-Base Voltage (Vebo)6VMax emitter-base breakdown
Collector Cutoff Current50nALeakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N5551TA NPN TO-92 160V 600mA 80 625mW
2N5551 NPN TO-92 160V 600mA 80 625mW
ST(Semtech) ๐Ÿ“„ PDF
2N5550TFR-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
KSP8099TF-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
NTE194-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
NTE297-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
ZTX694B-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
2N5551 NPN TO-92 160V 600mA 240 625mW
HXY MOSFET ๐Ÿ“„ PDF
2N5551 NPN TO-92 160V 600mA 250 625mW
KSC2383OTA NPN TO-92 160V 1A 60 900mW
2SC2383-Y NPN TO-92 160V 1A 320 700mW
3DD13002B(RANGE:25-30) NPN TO-92 400V 800mA 25 900mW
PHE13003A NPN TO-92 400V 1A 7.5 2.1W
412 NPN TO-92 400V 1.5A 20 900mW