2N5551 Datasheet & Equivalents

NPN TO-92 General Purpose DIOTEC
VCEO
160V
Ic Max
600mA
Pd Max
625mW
hFE Gain
250

Quick Reference

The 2N5551 is a NPN bipolar junction transistor in a TO-92 package, manufactured by DIOTEC. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIOTECOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
CategorySingleConfiguration
Collector-Emitter Voltage (VCEO)160VMax breakdown voltage
Collector Current (Ic)600mAMax current handling
Power Dissipation (Pd)625mWMax thermal limit
DC Current Gain (hFE)250Base signal amplification ratio
Transition Frequency (fT)300MHzMax operating frequency
Saturation Voltage (VCEsat)-Voltage drop when fully ON
Emitter-Base Voltage (Vebo)-Max emitter-base breakdown
Collector Cutoff Current-Leakage current when OFF
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent Transistors & Alternatives

PartTypePackageVCEOIChFEPdManufacturer / Datasheet
2N5550TFR-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
KSP8099TF-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
NTE194-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
NTE297-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
ZTX694B-HXY NPN TO-92 160V 600mA 200 625mW
HXY MOSFET ๐Ÿ“„ PDF
2N5551TA NPN TO-92 160V 600mA 80 625mW
2N5551TFR NPN TO-92 160V 600mA 80 625mW
2SC2383-Y NPN TO-92 160V 1A 320 700mW
KSC2383OTA NPN TO-92 160V 1A 60 900mW
3DD13002B(RANGE:25-30) NPN TO-92 400V 800mA 25 900mW
PHE13003A NPN TO-92 400V 1A 7.5 2.1W
412 NPN TO-92 400V 1.5A 20 900mW