3DD13003B-TA Datasheet & Equivalents
NPN
TO-92
General Purpose
JSCJ
VCEO
400V
Ic Max
1.5A
Pd Max
900mW
hFE Gain
20
Quick Reference
The 3DD13003B-TA is a NPN bipolar junction transistor in a TO-92 package, manufactured by JSCJ. It supports a breakdown voltage of 400V and continuous collector current of 1.5A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-92 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 400V | Max breakdown voltage |
| Collector Current (Ic) | 1.5A | Max current handling |
| Power Dissipation (Pd) | 900mW | Max thermal limit |
| DC Current Gain (hFE) | 20 | Base signal amplification ratio |
| Transition Frequency (fT) | 4MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 3V | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 9V | Max emitter-base breakdown |
| Collector Cutoff Current | 100uA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||