2SD882 Transistor Datasheet & Specifications

NPN TO-252-2L General Purpose HXY MOSFET
VCEO
30V
Ic Max
3A
Pd Max
1.25W
hFE Gain
400

Quick Reference

The 2SD882 is a NPN bipolar transistor in a TO-252-2L package by HXY MOSFET. This datasheet provides complete specifications including 30V breakdown voltage and 3A continuous collector current. Download the 2SD882 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO30VBreakdown voltage
Ic3ACollector current
Pd1.25WPower dissipation
DC Current Gain400hFE / Beta
Frequency6MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
2SD1815(RANGE:100-200) NPN TO-252-2L 100V 3A 1W
2SD1760Q NPN TO-252-2L 50V 3A 1.5W
2SD1802(RANGE:100-200) NPN TO-252-2L 50V 3A 1W
MJD31C NPN TO-252-2L 100V 3A 1.25W
MJD41C NPN TO-252-2L 100V 3A 1W
D882M(RANGE:160-320) NPN TO-252-2L 30V 3A 1.25W
MJD41C NPN TO-252-2L 100V 9A 1.25W
MJD3055 NPN TO-252-2L 60V 10A 1.25W
2SD1760 NPN TO-252-2L 50V 3A 1.5W
MJD122 NPN TO-252-2L 100V 8A 1.5W