MJD122 Transistor Datasheet & Specifications
NPN
TO-252-2L
General Purpose
JSCJ
VCEO
100V
Ic Max
8A
Pd Max
1.5W
hFE Gain
12000
Quick Reference
The MJD122 is a NPN bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 100V breakdown voltage and 8A continuous collector current. Download the MJD122 datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | TO-252-2L | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 100V | Breakdown voltage |
| Ic | 8A | Collector current |
| Pd | 1.5W | Power dissipation |
| DC Current Gain | 12000 | hFE / Beta |
| Frequency | - | Transition speed (fT) |
| VCEsat | 4V@8A,80mA | Saturation voltage |
| Vebo | - | Emitter-Base voltage |
| Cutoff Current | 10uA | Leakage (ICBO) |
| Temp | -55℃~+150℃ | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJD41C | NPN | TO-252-2L | 100V | 9A | 1.25W |