MJD3055 Transistor Datasheet & Specifications

NPN TO-252-2L General Purpose JSCJ
VCEO
60V
Ic Max
10A
Pd Max
1.25W
hFE Gain
20
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Quick Reference

The MJD3055 is a NPN bipolar transistor in a TO-252-2L package by JSCJ. This datasheet provides complete specifications including 60V breakdown voltage and 10A continuous collector current. Download the MJD3055 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerJSCJOriginal Manufacturer
PackageTO-252-2LPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic10ACollector current
Pd1.25WPower dissipation
DC Current Gain20hFE / Beta
Frequency2MHzTransition speed (fT)
VCEsat8VSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current20uALeakage (ICBO)
Temp-55℃~+150℃Operating temp

Equivalent Transistors & Alternatives

Sorry, we do not have any direct replacements for this part in our database at this time.
View all TO-252-2L NPN Transistors ›