2SD880-Y Transistor Datasheet & Specifications

NPN TO-220AB High Power YFW
VCEO
60V
Ic Max
3A
Pd Max
30W
hFE Gain
300

Quick Reference

The 2SD880-Y is a NPN bipolar transistor in a TO-220AB package by YFW. This datasheet provides complete specifications including 60V breakdown voltage and 3A continuous collector current. Download the 2SD880-Y datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-220ABPhysical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic3ACollector current
Pd30WPower dissipation
DC Current Gain300hFE / Beta
Frequency3MHzTransition speed (fT)
VCEsat1VSaturation voltage
Vebo7VEmitter-Base voltage
Cutoff Current100uALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
TIP41C NPN TO-220AB 100V 6A 2W
3DD13007 NPN TO-220AB 400V 8A 2W
YFW13009AT NPN TO-220AB 400V 12A 3W
TIP41C NPN TO-220AB 100V 6A 65W
YFW13007AT NPN TO-220AB 400V 8A 2W
YFW13005AT NPN TO-220AB 400V 4A 2W
BU406 NPN TO-220AB 200V 7A 60W
13009 NPN TO-220AB 410V 12A 80W