2SD1664G-Q-AB3-R Transistor Datasheet & Specifications

NPN SOT-89 General Purpose UTC
VCEO
32V
Ic Max
1A
Pd Max
1.9W
hFE Gain
390

Quick Reference

The 2SD1664G-Q-AB3-R is a NPN bipolar transistor in a SOT-89 package by UTC. This datasheet provides complete specifications including 32V breakdown voltage and 1A continuous collector current. Download the 2SD1664G-Q-AB3-R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerUTCOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic1ACollector current
Pd1.9WPower dissipation
DC Current Gain390hFE / Beta
Frequency150MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
2DD1664R-13 NPN SOT-89 32V 1A 1W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
2DD1664P-13 NPN SOT-89 32V 1A 1.5W
2DD1664Q-13 NPN SOT-89 32V 1A 1.5W
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W