2SD1664 Transistor Datasheet & Specifications

NPN SOT-89 General Purpose R+O
VCEO
32V
Ic Max
1A
Pd Max
0.5mW
hFE Gain
390

Quick Reference

The 2SD1664 is a NPN bipolar transistor in a SOT-89 package by R+O. This datasheet provides complete specifications including 32V breakdown voltage and 1A continuous collector current. Download the 2SD1664 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerR+OOriginal Manufacturer
PackageSOT-89Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO32VBreakdown voltage
Ic1ACollector current
Pd0.5mWPower dissipation
DC Current Gain390hFE / Beta
Frequency120MHzTransition speed (fT)
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-55โ„ƒ~+155โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
BCX56-16,115 NPN SOT-89 80V 1A 1.35W
2DD1664R-13 NPN SOT-89 32V 1A 1W
ZXTN2010ZTA NPN SOT-89 60V 5A 2.1W
2DD1664P-13 NPN SOT-89 32V 1A 1.5W
2DD1664Q-13 NPN SOT-89 32V 1A 1.5W
BCX56-16 NPN SOT-89 80V 1A 1.3W
ZXTN19055DZTA NPN SOT-89 55V 6A 2.1W
FCX690BTA NPN SOT-89 45V 2A 2W
2SC5824T100R NPN SOT-89 60V 3A 2W
2STF1360 NPN SOT-89 60V 3A 1.4W