2SC5876U3T106Q Transistor Datasheet & Specifications

NPN SOT-323 General Purpose ROHM
VCEO
60V
Ic Max
500mA
Pd Max
200mW
hFE Gain
120

Quick Reference

The 2SC5876U3T106Q is a NPN bipolar transistor in a SOT-323 package by ROHM. This datasheet provides complete specifications including 60V breakdown voltage and 500mA continuous collector current. Download the 2SC5876U3T106Q datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO60VBreakdown voltage
Ic500mACollector current
Pd200mWPower dissipation
DC Current Gain120hFE / Beta
Frequency300MHzTransition speed (fT)
VCEsat150mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current1uALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
DSS4160U-7 NPN SOT-323 60V 1A 400mW
ZUMT491 NPN SOT-323 60V 1A 250mW
BC817-40W NPN SOT-323 65V 500mA 200mW
MMSTA05-7-F NPN SOT-323 60V 500mA 200mW
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW