2SC4102T106R Transistor Datasheet & Specifications

NPN SOT-323 General Purpose ROHM
VCEO
120V
Ic Max
50mA
Pd Max
200mW
hFE Gain
180

Quick Reference

The 2SC4102T106R is a NPN bipolar transistor in a SOT-323 package by ROHM. This datasheet provides complete specifications including 120V breakdown voltage and 50mA continuous collector current. Download the 2SC4102T106R datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerROHMOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic50mACollector current
Pd200mWPower dissipation
DC Current Gain180hFE / Beta
Frequency140MHzTransition speed (fT)
VCEsat500mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current500nALeakage (ICBO)
Temp-55โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA42-7-F NPN SOT-323 300V 200mA 200mW
MMST5551-7-F NPN SOT-323 160V 200mA 200mW
MMSTA42 NPN SOT-323 300V 200mA 300mW
MMST5551Q-7-F NPN SOT-323 160V 200mA 200mW
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
2SC4117-GR(TE85L,F NPN SOT-323 120V 100mA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW