2SC4117-GR(TE85L,F Transistor Datasheet & Specifications

NPN SOT-323 General Purpose TOSHIBA
VCEO
120V
Ic Max
100mA
Pd Max
200mW
hFE Gain
700

Quick Reference

The 2SC4117-GR(TE85L,F is a NPN bipolar transistor in a SOT-323 package by TOSHIBA. This datasheet provides complete specifications including 120V breakdown voltage and 100mA continuous collector current. Download the 2SC4117-GR(TE85L,F datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerTOSHIBAOriginal Manufacturer
PackageSOT-323Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO120VBreakdown voltage
Ic100mACollector current
Pd200mWPower dissipation
DC Current Gain700hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat300mVSaturation voltage
Vebo5VEmitter-Base voltage
Cutoff Current100nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MMSTA42-7-F NPN SOT-323 300V 200mA 200mW
MMST5551-7-F NPN SOT-323 160V 200mA 200mW
MMSTA42 NPN SOT-323 300V 200mA 300mW
MMST5551Q-7-F NPN SOT-323 160V 200mA 200mW
MMST5551-JSM NPN SOT-323 160V 600mA 200mW
MMST5551 NPN SOT-323 160V 600mA 200mW
MMSTA06-7-F-HXY NPN SOT-323 160V 600nA 200mW
BC816-25WX-HXY NPN SOT-323 160V 600mA 200mW
MMBTA06WT1G-HXY NPN SOT-323 160V 600mA 200mW
PMST5551-HXY NPN SOT-323 160V 600nA 200mW