2N6052 Transistor Datasheet & Specifications

PNP TO-3 High Power SPTECH
VCEO
100V
Ic Max
12A
Pd Max
150W
hFE Gain
18000

Quick Reference

The 2N6052 is a PNP bipolar transistor in a TO-3 package by SPTECH. This datasheet provides complete specifications including 100V breakdown voltage and 12A continuous collector current. Download the 2N6052 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerSPTECHOriginal Manufacturer
PackageTO-3Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO100VBreakdown voltage
Ic12ACollector current
Pd150WPower dissipation
DC Current Gain18000hFE / Beta
Frequency-Transition speed (fT)
VCEsat3VSaturation voltage
Vebo-Emitter-Base voltage
Cutoff Current-Leakage (ICBO)
Temp-65โ„ƒ~+150โ„ƒOperating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
MJ15022 PNP TO-3 200V 16A 250W
MJ15004G-JSM PNP TO-3 140V 20A 250W
MJ15023G-JSM PNP TO-3 200V 16A 250W
BD318 PNP TO-3 100V 16A 200W
MJ15016 PNP TO-3 120V 15A 180W
MJ11033 PNP TO-3 120V 50A 300W
MJ15025-JSM PNP TO-3 250V 16A 250W
MJ15023 PNP TO-3 200V 16A 250W
MJ15025 PNP TO-3 250V 16A 250W