MJ15004G-JSM Transistor Datasheet & Specifications
PNP
TO-3
High Power
JSMSEMI
VCEO
140V
Ic Max
20A
Pd Max
250W
hFE Gain
150
Quick Reference
The MJ15004G-JSM is a PNP bipolar transistor in a TO-3 package by JSMSEMI. This datasheet provides complete specifications including 140V breakdown voltage and 20A continuous collector current. Download the MJ15004G-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 140V | Breakdown voltage |
| Ic | 20A | Collector current |
| Pd | 250W | Power dissipation |
| DC Current Gain | 150 | hFE / Beta |
| Frequency | 2MHz | Transition speed (fT) |
| VCEsat | 1V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 250uA | Leakage (ICBO) |
| Temp | - | Operating temp |