MJ15023G-JSM Transistor Datasheet & Specifications
PNP
TO-3
High Power
JSMSEMI
VCEO
200V
Ic Max
16A
Pd Max
250W
hFE Gain
60
Quick Reference
The MJ15023G-JSM is a PNP bipolar transistor in a TO-3 package by JSMSEMI. This datasheet provides complete specifications including 200V breakdown voltage and 16A continuous collector current. Download the MJ15023G-JSM datasheet PDF above for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSMSEMI | Original Manufacturer |
| Package | TO-3 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| VCEO | 200V | Breakdown voltage |
| Ic | 16A | Collector current |
| Pd | 250W | Power dissipation |
| DC Current Gain | 60 | hFE / Beta |
| Frequency | 4MHz | Transition speed (fT) |
| VCEsat | 4V | Saturation voltage |
| Vebo | 5V | Emitter-Base voltage |
| Cutoff Current | 500uA | Leakage (ICBO) |
| Temp | - | Operating temp |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|---|---|---|---|---|
| MJ15022 | PNP | TO-3 | 200V | 16A | 250W |
| MJ15025-JSM | PNP | TO-3 | 250V | 16A | 250W |
| MJ15023 | PNP | TO-3 | 200V | 16A | 250W |
| MJ15025 | PNP | TO-3 | 250V | 16A | 250W |