2N5551 Transistor Datasheet & Specifications

NPN TO-92 General Purpose YFW
VCEO
160V
Ic Max
100mA
Pd Max
625mW
hFE Gain
250

Quick Reference

The 2N5551 is a NPN bipolar transistor in a TO-92 package by YFW. This datasheet provides complete specifications including 160V breakdown voltage and 100mA continuous collector current. Download the 2N5551 datasheet PDF above for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerYFWOriginal Manufacturer
PackageTO-92Physical mounting
Transistor TypeBJTBipolar Junction Transistor
VCEO160VBreakdown voltage
Ic100mACollector current
Pd625mWPower dissipation
DC Current Gain250hFE / Beta
Frequency100MHzTransition speed (fT)
VCEsat200mVSaturation voltage
Vebo6VEmitter-Base voltage
Cutoff Current50nALeakage (ICBO)
Temp-Operating temp

Equivalent Transistors & Alternatives

PartTypePackageVCEOIcPd
KSP8099TF-HXY NPN TO-92 160V 600mA 625mW
NTE297-HXY NPN TO-92 160V 600mA 625mW
2N6517-TA NPN TO-92 350V 500mA 625mW
3DD13002B(RANGE:25-30) NPN TO-92 400V 800mA 900mW
MPSA42 NPN TO-92 300V 500mA 625mW
ZTX658 NPN TO-92 400V 500mA 1W
2N5551 NPN TO-92 160V 600mA 625mW
3DD13003B-TA NPN TO-92 400V 1.5A 900mW
2N5551 NPN TO-92 160V 600mA 625mW
MPSA42 NPN TO-92 300V 500mA 1.5W