15N10 MOSFET Datasheet & Specifications

N-Channel TO-252 Logic-Level UMW
Vds Max
100V
Id Max
15A
Rds(on)
95mΩ@10V
Vgs(th)
1.6V

Quick Reference

The 15N10 is an N-Channel MOSFET in a TO-252 package, manufactured by UMW. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 15A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerUMWOriginal Manufacturer
PackageTO-252Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)15AMax current handling
Power Dissipation (Pd)55WMax thermal limit
On-Resistance (Rds(on))95mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.6VVoltage required to turn on
Gate Charge (Qg)19.2nC@10VSwitching energy
Input Capacitance (Ciss)632pFInternal gate capacitance
Output Capacitance (Coss)37pFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

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