H18N20D MOSFET Datasheet & Specifications
N-Channel
TO-252
Logic-Level
Huixin
Vds Max
200V
Id Max
18A
Rds(on)
95mΩ@10V
Vgs(th)
2.1V
Quick Reference
The H18N20D is an N-Channel MOSFET in a TO-252 package, manufactured by Huixin. It supports a drain-source breakdown voltage of 200V and a continuous drain current of 18A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | Huixin | Original Manufacturer |
| Package | TO-252 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 200V | Max breakdown voltage |
| Continuous Drain Current (Id) | 18A | Max current handling |
| Power Dissipation (Pd) | 83W | Max thermal limit |
| On-Resistance (Rds(on)) | 95mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.1V | Voltage required to turn on |
| Gate Charge (Qg) | 9.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 491pF | Internal gate capacitance |
| Output Capacitance (Coss) | 22pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |