ZXMN10A07FTA MOSFET Datasheet & Specifications

N-Channel SOT-23 Standard Power DIODES
Vds Max
100V
Id Max
760mA
Rds(on)
-
Vgs(th)
4V
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Quick Reference

The ZXMN10A07FTA is an N-Channel MOSFET in a SOT-23 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 760mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-23Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)760mAMax current handling
Power Dissipation (Pd)806mWMax thermal limit
On-Resistance (Rds(on))-Resistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)2.9nC@10VSwitching energy
Input Capacitance (Ciss)280pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55โ„ƒ~+150โ„ƒSafe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
5N10-MS N-Channel SOT-23 100V 5A 90mฮฉ@10V 1.5V
MSKSEMI ๐Ÿ“„ PDF
SI2392ADS-T1-GE3 N-Channel SOT-23 100V 3.1A 126mฮฉ@10V 3V
VISHAY ๐Ÿ“„ PDF
AP10TN135N N-Channel SOT-23 100V 2.1A 135mฮฉ@10V 3V
APEC ๐Ÿ“„ PDF
NCE0102 N-Channel SOT-23 100V 2A 240mฮฉ@10V 2.5V
NCE ๐Ÿ“„ PDF
SI2328A N-Channel SOT-23 100V 1.5A 245mฮฉ@10V
265mฮฉ@4.5V		 2V;4V
UMW ๐Ÿ“„ PDF
SI2324DS-T1-GE3 N-Channel SOT-23 100V 2.3A 278mฮฉ@4.5V 2.8V
VISHAY ๐Ÿ“„ PDF
DO3N10B N-Channel SOT-23 100V 3A 280mฮฉ@10V 2.5V
DOINGTER ๐Ÿ“„ PDF
SQ2398ES-T1_GE3 N-Channel SOT-23 100V 1.6A 300mฮฉ@10V 3.5V
VISHAY ๐Ÿ“„ PDF
AS2324 N-Channel SOT-23 100V 2A 310mฮฉ@4.5V 3V
AnBon ๐Ÿ“„ PDF
SOT-23 N-Channel