YJG60G04HHQ MOSFET Datasheet & Specifications

N-Channel PDFN5060-8L High-Current YANGJIE
Vds Max
40V
Id Max
60A
Rds(on)
6.8mΩ@10V
Vgs(th)
4V

Quick Reference

The YJG60G04HHQ is an N-Channel MOSFET in a PDFN5060-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackagePDFN5060-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)73WMax thermal limit
On-Resistance (Rds(on))6.8mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))4VVoltage required to turn on
Gate Charge (Qg)12.5nC@10VSwitching energy
Input Capacitance (Ciss)1nFInternal gate capacitance
Output Capacitance (Coss)335pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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