YJG60G10A MOSFET Datasheet & Specifications
N-Channel
PDFN5060-8L
High-Current
YANGJIE
Vds Max
100V
Id Max
60A
Rds(on)
8.6mΩ@10V
Vgs(th)
4V
Quick Reference
The YJG60G10A is an N-Channel MOSFET in a PDFN5060-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 60A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 60A | Max current handling |
| Power Dissipation (Pd) | 28.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 8.6mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 32nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.431nF | Internal gate capacitance |
| Output Capacitance (Coss) | 715pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| XRS75N10F | N-Channel | PDFN5060-8L | 100V | 75A | 7.75mΩ@10V | 2.3V | XNRUSEMI 📄 PDF |
| XRS75N10F | N-Channel | PDFN5060-8L | 100V | 75A | 7.75mΩ@10V | 2.3V | XNRUSEMI 📄 PDF |
| YJG88G12A | N-Channel | PDFN5060-8L | 120V | 88A | 9.6mΩ@4.5V | 3V | YANGJIE 📄 PDF |
| YJG60G15HJ | N-Channel | PDFN5060-8L | 150V | 60A | 19mΩ@10V | 4V | YANGJIE 📄 PDF |