YJG50N03A MOSFET Datasheet & Specifications

N-Channel PDFN5060-8L Logic-Level YANGJIE
Vds Max
30V
Id Max
50A
Rds(on)
3.9mΩ@10V;5mΩ@4.5V
Vgs(th)
2.5V

Quick Reference

The YJG50N03A is an N-Channel MOSFET in a PDFN5060-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 50A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerYANGJIEOriginal Manufacturer
PackagePDFN5060-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)50AMax current handling
Power Dissipation (Pd)30WMax thermal limit
On-Resistance (Rds(on))3.9mΩ@10V;5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)54nC@10VSwitching energy
Input Capacitance (Ciss)2.504nFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

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