YJG150N03A MOSFET Datasheet & Specifications
N-Channel
PDFN5060-8L
Logic-Level
YANGJIE
Vds Max
30V
Id Max
150A
Rds(on)
1.58mΩ@10V
Vgs(th)
2.5V
Quick Reference
The YJG150N03A is an N-Channel MOSFET in a PDFN5060-8L package, manufactured by YANGJIE. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 150A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | YANGJIE | Original Manufacturer |
| Package | PDFN5060-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 150A | Max current handling |
| Power Dissipation (Pd) | 75W | Max thermal limit |
| On-Resistance (Rds(on)) | 1.58mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 92.7nC@10V | Switching energy |
| Input Capacitance (Ciss) | 4.498nF | Internal gate capacitance |
| Output Capacitance (Coss) | 800pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| YJG210G06AR | N-Channel | PDFN5060-8L | 60V | 210A | 1.6mΩ@10V | 2.5V | YANGJIE 📄 PDF |