XRS60N10F MOSFET Datasheet & Specifications

N-Channel PDFN-8L(5x6) Logic-Level XNRUSEMI
Vds Max
100V
Id Max
60A
Rds(on)
10mΩ@10V
Vgs(th)
2.5V

Quick Reference

The XRS60N10F is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by XNRUSEMI. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 60A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerXNRUSEMIOriginal Manufacturer
PackagePDFN-8L(5x6)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)100VMax breakdown voltage
Continuous Drain Current (Id)60AMax current handling
Power Dissipation (Pd)67.5WMax thermal limit
On-Resistance (Rds(on))10mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2.5VVoltage required to turn on
Gate Charge (Qg)22.7nC@10VSwitching energy
Input Capacitance (Ciss)1.208nFInternal gate capacitance
Output Capacitance (Coss)144pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

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