PGN10N100 MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(5x6)
Logic-Level
HT(Shenzhen Jinyu Semicon)
Vds Max
100V
Id Max
65A
Rds(on)
7.8mΩ@10V
Vgs(th)
2V
Quick Reference
The PGN10N100 is an N-Channel MOSFET in a PDFN-8L(5x6) package, manufactured by HT(Shenzhen Jinyu Semicon). It supports a drain-source breakdown voltage of 100V and a continuous drain current of 65A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | HT(Shenzhen Jinyu Semicon) | Original Manufacturer |
| Package | PDFN-8L(5x6) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 65A | Max current handling |
| Power Dissipation (Pd) | 90W | Max thermal limit |
| On-Resistance (Rds(on)) | 7.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 38nC@10V | Switching energy |
| Input Capacitance (Ciss) | 2.14nF | Internal gate capacitance |
| Output Capacitance (Coss) | 495pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| SKQ90N10AD | N-Channel | PDFN-8L(5x6) | 100V | 93A | 5mΩ@4.5V | 2V | Shikues 📄 PDF |
| XRS80N12F | N-Channel | PDFN-8L(5x6) | 120V | 80A | 7.7mΩ@10V | 1.8V | XNRUSEMI 📄 PDF |